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Multi-Step Magnetization Process of Gd-Co/Co/Cu/Co Thermo-Sensitive Spin Valves

dc.contributor.authorSvalov, Andrey
dc.contributor.authorOrue Goikuria, Iñaki ORCID
dc.contributor.authorKurlyandskaya, Galina V. ORCID
dc.date.accessioned2019-03-07T11:57:53Z
dc.date.available2019-03-07T11:57:53Z
dc.date.issued2018-11-25
dc.identifier.citationElectronics 7(12) : (2018) Article ID 351es_ES
dc.identifier.issn2079-9292
dc.identifier.urihttp://hdl.handle.net/10810/31904
dc.description.abstractMagnetic and magnetoresistive properties of the Gd-Co/Co/Cu/Co magnetic type multilayered sensitive spin valve were studied as a function of temperature. It is shown that the appearance of a non-collinear magnetic structure significantly affects the shape of the magnetoresistive hysteresis loop. The characteristic values of the critical field related to the appearance of non-collinear structure depend on the temperature of the spin valve. The obtained results can serve as a basis for the improvements of functional properties and expanding the application areas of magnetic multilayered sensitive elements of the spin valve type; for example, for precise determination of the position of the object.es_ES
dc.description.sponsorshipThis work was in part supported by RFBR grant 17-02-00236-a of Russian Federation and by the ACTIMAT ELKARTEK KK-2016/00097 grant of the Basque Country Government.es_ES
dc.language.isoenges_ES
dc.publisherMDPIes_ES
dc.rightsinfo:eu-repo/semantics/openAccesses_ES
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/*
dc.subjectspin valveses_ES
dc.subjectferrimagnetses_ES
dc.subjectgiant magnetoresistancees_ES
dc.subjectmagnetic multilayerses_ES
dc.subjectinterlayer couplinges_ES
dc.subjectnon-collinear magnetic structurees_ES
dc.subjecttemperature-dependencees_ES
dc.subjecttransitiones_ES
dc.subjectalloyses_ES
dc.titleMulti-Step Magnetization Process of Gd-Co/Co/Cu/Co Thermo-Sensitive Spin Valveses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.holderThis is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).es_ES
dc.rights.holderAtribución 3.0 España*
dc.relation.publisherversionhttps://www.mdpi.com/2079-9292/7/12/351es_ES
dc.identifier.doi10.3390/electronics7120351
dc.departamentoesElectricidad y electrónicaes_ES
dc.departamentoeuElektrizitatea eta elektronikaes_ES


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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
Except where otherwise noted, this item's license is described as This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).