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      Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides 

      Barja Martínez, Sara; Refaely Abramson, Sivan; Schuler, Bruno; Qiu, Diana Y.; Pulkin, Artem; Wickenburg, Sebastian; Ryu, Hyejin; Moreno Ugeda, Miguel; Kastl, Christoph; Chen, Christopher; Hwang, Choongyu; Schwartzberg, Adam; Aloni, Shaul; Mo, Sung-Kwan; Ogletree, D. Frank; Crommie, Michael F.; Yazyev, Oleg V.; Louie, Steven G.; Neaton, Jeffrey B.; Weber-Bargioni, Alexander (Nature, 2019-07-29)
      Chalcogen vacancies are generally considered to be the most common point defects in transition metal dichalcogenide (TMD) semiconductors because of their low formation energy in vacuum and their frequent observation in ...