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dc.contributor.authorSvalov, Andrey
dc.contributor.authorSavin, Peter A.
dc.contributor.authorLepalovskij, V. N.
dc.contributor.authorLarrañaga Varga, Aitor ORCID
dc.contributor.authorVas'kovskiy, V. O.
dc.contributor.authorGarcía Arribas, Alfredo
dc.contributor.authorKourliandskaia, Galina
dc.date.accessioned2014-02-06T19:07:51Z
dc.date.available2014-02-06T19:07:51Z
dc.date.issued2013-09
dc.identifier.citationAIP Advances 3(9) : (2013) // Article N. 092104es
dc.identifier.issn2158-3226
dc.identifier.urihttp://hdl.handle.net/10810/11375
dc.description.abstractFeNi/FeMn bilayers were grown in a magnetic field and subjected to heat treatments at temperatures of 50 to 350 degrees C in vacuum or in a gas mixture containing oxygen. In the as-deposited state, the hysteresis loop of 30 nm FeNi layer was shifted. Low temperature annealing leads to a decrease of the exchange bias field. Heat treatments at higher temperatures in gas mixture result in partial oxidation of 20 nm thick FeMn layer leading to a nonlinear dependence of coercivity and a switching field of FeNi layer on annealing temperature. The maximum of coercivity and switching field were observed after annealing at 300 degrees C.es
dc.description.sponsorshipThis work was supported by Russian Ministry of Education and Science, (contract No 02.G36.31.0004), SAIOTEK S-PE12UN025 and REMASEN grants of UPV-EHU, Spanish Government grant MAT2011-27573-C04 and Basque Government "Emergency Research Groups" grants.es
dc.language.isoenges
dc.publisherAIP Publishinges
dc.rightsinfo:eu-repo/semantics/openAccesses
dc.subjectmagnetic propertieses
dc.subjectthin filmses
dc.subjectlayeres
dc.subjecttrilayerses
dc.titleExchange biased FeNi/FeMn bilayers with coercivity and switching field enhanced by FeMn surface oxidationes
dc.typeinfo:eu-repo/semantics/articlees
dc.rights.holder© 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.es
dc.relation.publisherversionhttp://scitation.aip.org/content/aip/journal/adva/3/9/10.1063/1.4821105es
dc.identifier.doi10.1063/1.4821105
dc.departamentoesElectricidad y electrónicaes_ES
dc.departamentoeuElektrizitatea eta elektronikaes_ES


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