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dc.contributor.authorMena Osteritz, Elena
dc.contributor.authorUrdanpilleta Landaribar, Marta
dc.contributor.authorEl-Hosseiny, Erwaa
dc.contributor.authorKoslowski, Berndt
dc.contributor.authorZiemann, Paul
dc.contributor.authorBaeuerle, Peter
dc.date.accessioned2014-02-20T17:59:01Z
dc.date.available2014-02-20T17:59:01Z
dc.date.issued2011-11
dc.identifier.citationBeilstein Journal of Nanotechnology 2 : 802–808 (2011)es
dc.identifier.issn2190-4286
dc.identifier.urihttp://hdl.handle.net/10810/11594
dc.description.abstractThe self-assembly properties of a series of functionalized regioregular oligo(3-alkylthiophenes) were investigated by using scanning tunneling microscopy (STM) at the liquid-solid interface under ambient conditions. The characteristics of the 2-D crystals formed on the (0001) plane of highly ordered pyrolitic graphite (HOPG) strongly depend on the length of the p-conjugated oligomer backbone, on the functional groups attached to it, and on the alkyl substitution pattern on the individual thiophene units. Theoretical calculations were performed to analyze the geometry and electronic density of the molecular orbitals as well as to analyze the intermolecular interactions, in order to obtain models of the 2-D molecular ordering on the substrate.es
dc.description.sponsorshipDeutsche Forschungsgemeinschaft within the collaborative research unit SFB 569es
dc.language.isoenges
dc.publisherBeilstein Institutes
dc.rightsinfo:eu-repo/semantics/openAccesses
dc.subject2-D crystalses
dc.subjectfunctionalized oligothiopheneses
dc.subjectH-bondinges
dc.subjectintermolecular interactiones
dc.subjectscanning tunneling microscopyes
dc.titleSTM study on the self-assembly of oligothiophene-based organic semiconductorses
dc.typeinfo:eu-repo/semantics/articlees
dc.rights.holder© 2011 Mena-Osteritz et al; licensee Beilstein-Institut. This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (http://www.beilstein-journals.org/bjnano)es
dc.relation.publisherversionhttp://www.beilstein-journals.org/bjnano/single/articleFullText.htm?publicId=2190-4286-2-88es
dc.identifier.doi10.3762/bjnano.2.88
dc.departamentoesFísica aplicada Ies_ES
dc.departamentoeuFisika aplikatua Ies_ES
dc.subject.categoriaELECTRICAL AND ELECTRONIC ENGINEERING
dc.subject.categoriaPHYSICS AND ASTRONOMY
dc.subject.categoriaMATERIALS SCIENCE


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