dc.contributor.author | Aretxabaleta Astoreka, Iker | |
dc.contributor.author | Martínez de Alegría Mancisidor, Iñigo ![ORCID](/themes/Mirage2//images/orcid_16x16.png) | |
dc.contributor.author | Gárate Añibarro, José Ignacio | |
dc.contributor.author | Matallana Fernandez, Asier ![ORCID](/themes/Mirage2//images/orcid_16x16.png) | |
dc.contributor.author | Andreu Larrañaga, Jon ![ORCID](/themes/Mirage2//images/orcid_16x16.png) | |
dc.date.accessioned | 2024-01-31T12:29:01Z | |
dc.date.available | 2024-01-31T12:29:01Z | |
dc.date.issued | 2020-01-06 | |
dc.identifier.citation | IEEE Transactions on Power Electronics 35(8) : 8025-8033 (2020) | es_ES |
dc.identifier.issn | 1941-0107 | |
dc.identifier.issn | 0885-8993 | |
dc.identifier.uri | http://hdl.handle.net/10810/64503 | |
dc.description.abstract | Wide Bandgap (WBG) transistors provide better switching performance and higher operating temperatures compared to state of the art Si devices and are suited for high frequency applications due to very short switching times. The main obstacle for implementation of WBG transistors at full potential is the high frequency oscillation in voltage and current during switching transients. Oscillations arise from resonance due to parasitic and device inductances and capacitances. Introduction of WBG transistors depends on the elimination of these oscillations and their negative effect on the performance of power converters. Good layout practice is mandatory, but there is a limit to the reduction of these parasitics and, often, slowing of the semiconductor switching time must be applied. This paper presents a simple methodology for the attenuation of the negative effects of WBG transistor high frequency oscillations
without increasing rise and fall times. The proposed methodology is based on determination of the source of feedback resonant frequency between gate and power loops using network analyzer measurement on PCB and utilization of tuned RLC filter. Experimental application of the methodology shows direct relationship between loop resonant frequency and voltage and current oscillations. The proposed method reduces power losses, high frequency oscillations and EMI. | es_ES |
dc.description.sponsorship | UPV/EHU IT978-16, GV/EJ (Elkartek) KK-2018/00040 | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | IEEE | es_ES |
dc.rights | info:eu-repo/semantics/openAccess | es_ES |
dc.subject | WBG | es_ES |
dc.subject | switching oscillation | es_ES |
dc.subject | switching losses | es_ES |
dc.subject | RLC filter | es_ES |
dc.title | Wide Bandgap semiconductor HF-oscillation attenuation method with tuned gate RLC filter | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.rights.holder | “© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.” | es_ES |
dc.relation.publisherversion | https://doi.org/10.1109/TPEL.2020.2964272 | es_ES |
dc.identifier.doi | 10.1109/TPEL.2020.2964272 | |
dc.departamentoes | Tecnología electrónica | es_ES |
dc.departamentoeu | Teknologia elektronikoa | es_ES |