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Defect and structural imperfection effects on the electronic properties of BiTeI surfaces

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Date
2014-07-24
Author
Fiedler, Sebastian
El-Kareh, Lydia
Eremeev, Sergey V.
Tereshchenko, Oleg E
Seibel, Christoph
Lutz, Peter
Kokh, Konstantin A
Tchoulkov Savkin, Evgueni Vladimirovich
Kuznetsova, Tatyana V
Grebennikov, Vladimir I
Bentmann, Hendrik
Bode, Matthias
Reinert, Friedrich
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New Journal of Physics 16 : (2014) // Article ID 075013
URI
http://hdl.handle.net/10810/16331
Abstract
The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areas
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