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Defect and structural imperfection effects on the electronic properties of BiTeI surfaces

dc.contributor.authorFiedler, Sebastian
dc.contributor.authorEl-Kareh, Lydia
dc.contributor.authorEremeev, Sergey V.
dc.contributor.authorTereshchenko, Oleg E
dc.contributor.authorSeibel, Christoph
dc.contributor.authorLutz, Peter
dc.contributor.authorKokh, Konstantin A
dc.contributor.authorTchoulkov Savkin, Evgueni Vladimirovich
dc.contributor.authorKuznetsova, Tatyana V
dc.contributor.authorGrebennikov, Vladimir I
dc.contributor.authorBentmann, Hendrik
dc.contributor.authorBode, Matthias
dc.contributor.authorReinert, Friedrich
dc.date.accessioned2015-12-03T17:07:22Z
dc.date.available2015-12-03T17:07:22Z
dc.date.issued2014-07-24
dc.identifier.citationNew Journal of Physics 16 : (2014) // Article ID 075013es
dc.identifier.issn1367-2630
dc.identifier.urihttp://hdl.handle.net/10810/16331
dc.description.abstractThe surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areases
dc.description.sponsorshipThe authors thank M A Gosalvez and M M Otrokov for helpful discussions. This work was financially supported by the Deutsche Forschungsgemeinschaft through FOR1162 and the Bundesministerium fur Bildung und Forschung (grant numbers 05K10WW1/2 and 05KS1WMB/1). TVK and VIG acknowledge partial support from the Government of Sverdlovsk Region and Russian Foundation for Basic Research (grant no. 13-02-96046_Ural) and the Ural Branch of the Russian Academy of Sciences (grant no. 12-U-2-1002). This publication was funded by the Deutsche Forschungsgemeinschaft and the University of Wurzburg in the funding programme Open Access Publishing.es
dc.language.isoenges
dc.publisherIOP Publishinges
dc.rightsinfo:eu-repo/semantics/openAccesses
dc.subjectelectronic structure; ; ;es
dc.subjectspin-orbit couplinges
dc.subjectsurface morphologyes
dc.subjectsemiconductor surfaceses
dc.subjectaugmented-wave methodes
dc.subjectinsulatores
dc.subjectdynamicses
dc.subjectmetalses
dc.subjectphasees
dc.titleDefect and structural imperfection effects on the electronic properties of BiTeI surfaceses
dc.typeinfo:eu-repo/semantics/articlees
dc.rights.holderContent from this work may be used under the terms of the Creative Commons Attribution 3.0 licence . Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOIes
dc.relation.publisherversionhttp://iopscience.iop.org/article/10.1088/1367-2630/16/7/075013/meta;jsessionid=8A4313D016A422DF3E4F88D37EB26E11.c2.iopscience.cld.iop.org#artAbstes
dc.identifier.doi10.1088/1367-2630/16/7/075013
dc.departamentoesFísica de materialeses_ES
dc.departamentoeuMaterialen fisikaes_ES
dc.subject.categoriaPHYSICS AND ASTRONOMY


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