The interference laser lithography and ion-beam sputtering have been reported. Magneto-optical Kerr effect magnetometry indicated that the sample exhibits four-fold anisotropic behaviour, i.e. different magnetization loops were observed when the external magnetic field was applied along either x-or y-axis, or along the array diagonal. Broadband ferromagnetic resonance measurements revealed a rich variety of different magnetization configurations in the unsaturated state that can be controlled by the orientation of the external magnetic field. Micromagnetic simulations have been performed to explain the observed results. On the contrary, in the saturated regime the system demonstrated almost isotropic magnetic behaviour that improves with external field increase. The obtained results show the potential of interference lithography for the fabrication of large area antidot arrays. (C) 2019 Author(s).
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